发明名称 |
Methods of fabricating semiconductor devices having laser-formed single crystalline active structures |
摘要 |
Methods of fabricating a semiconductor device are provided. A semiconductor substrate is provided that includes a single crystalline structure within at least a defined region thereof. A thin layer is formed on the semiconductor substrate. The thin layer is patterned to form a plurality of spaced apart field structures and to expose therebetween portions of the semiconductor substrate having the single crystalline structure. A non-crystalline layer is formed on the exposed portions of the semiconductor substrate having the single crystalline structure. The non-crystalline layer is planarized to expose upper surfaces of the field structures and define non-crystalline active structures from the non-crystalline layer between the field structures. A laser beam is generated that heats the non-crystalline active structures to change them into single crystalline active structures having substantially the same single crystalline structure as the defined region of the semiconductor substrate.
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申请公布号 |
US2008014726(A1) |
申请公布日期 |
2008.01.17 |
申请号 |
US20070701694 |
申请日期 |
2007.02.02 |
申请人 |
CHA YONG-WON;KANG SUNG-KWAN;KANG PIL-KYU;SON YONG-HOON;LEE JONG-WOOK |
发明人 |
CHA YONG-WON;KANG SUNG-KWAN;KANG PIL-KYU;SON YONG-HOON;LEE JONG-WOOK |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
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