| 摘要 |
<p>The present invention provides Al-based wiring material that allows, in a display device including thin film transistors and transparent electrode layers, direct bonding to the transparent electrode layer made of ITO, IZO or the like as well as direct bonding to the semiconductor layer, such as n + -Si. The Al-Ni-B alloy wiring material according to the present invention is configured such that the nickel content X at%, the nickel atomic percent, and the boron content Y at%, the boron atomic percent, satisfy the following equations: 0.5 ‰ X ‰ 10.0, 0.05 ‰ Y ‰ 11.0, Y + 0.25X ‰¥ 1.0 and Y + 1.15X ‰ 11.5, and the remainder is aluminum.</p> |
