METHOD OF FORMING A DEVICE

摘要

A method of forming a device is provided to produce an integrated circuit with a high etching selectivity to an oxide by using an amorphous carbon film. A method of forming a device includes the steps of: forming one or more amorphous carbon films(204) on a substrate(200) by placing the substrate inside a deposition chamber, supplying a gas mixture including one or more hydrocarbon compounds and inert gas to the deposition chamber, and heating the gas mixture such that the hydrocarbon compound in the gas mixture is thermally decomposed to form the amorphous carbon films on the substrate; forming a pattern in at least one region of the one or more amorphous carbon films; and transferring the pattern formed in at least one region of the one or more amorphous carbon film to the substrate by using the one or more amorphous carbon films as a mask.