| 摘要 |
<p>A flash memory device and its manufacturing method are provided the increase a distance between adjacent floating gates by increasing an upper width of the floating gate than a lower width thereof. A flash memory device includes a tunnel oxide film(101), a floating gate, a dielectric film, and a control gate. The tunnel oxide film is formed on a semiconductor substrate(100). The floating gate is formed on the tunnel oxide film. An upper width of the floating gate is smaller than a lower width of the floating gate, which is formed in a convex-like shape. The dielectric film is formed on the floating gate. The control gate is formed on the dielectric film. A ratio between the upper and lower widths is between 1:0.9 and 2:1.</p> |
