| 摘要 |
A method for forming a contact of a semiconductor device is provided to improve the reliability and yield of the device by reforming tWR(Write Recovery time) and LTRAS(Long Time for Row Address Strobe) characteristics of the device. A method for forming a contact(113) of a semiconductor device includes the steps of: forming a plate layer(111) on a top part of the semiconductor device provided with a predetermined bottom structure; forming an interlayer insulating layer on the top part of the plate layer; forming one rectangular contact hole penetrating the interlayer insulating layer; forming a barrier metal layer and a conductive layer on a top part of the interlayer insulating layer including the one contact hole; forming the contact by planarizing the conductive layer and the barrier metal layer; and forming a first metal wire on a top part of the contact.
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