METHOD OF MANUFCATURING A TUNNELING FIELD EFFECT TRANSISTOR

摘要

A method for manufacturing a tunneling field effect transistor is provided to increase an amount of tunneling current by adjusting a height of a work function by using a metal silicide or a metal. A gate structure(40) is formed on a semiconductor substrate(10). First and second impurity regions are formed on the semiconductor substrate, which is adjacent to the gate structure, by using a slant ion implantation process. The first and second impurity regions are asymmetrical with respect to each other and self-aligned with respect to the gate structure. At least one of the first and second impurity regions forms first and second source/drain regions(60,65), which contains the metal silicide by using a silicidation process.