发明名称 |
NANOCOMPOSITE PHOTORESIST COMPOSITION FOR IMAGING THICK FILMS |
摘要 |
<p>The present invention relates to a photoresist composition suitable for image-wise exposure and development as a positive photoresist comprising a positive photoresist composition and an inorganic particle material having an average particle size equal or greater than 10 nanometers, wherein the thickness of the photoresist coating film is greater than 5 microns. The positive photoresist composition can be selected from (1) a composition comprising (i) a film-forming resin having acid labile groups, and (ii) a photoacid generator, or (2) a composition comprising (i) a film-forming novolak resin, and (ii) a photoactive compound, or (3) a composition comprising (i) a film-forming resin, (ii) a photoacid generator, and (iii) a dissolution inhibitor.</p> |
申请公布号 |
EP1877865(A2) |
申请公布日期 |
2008.01.16 |
申请号 |
EP20060744634 |
申请日期 |
2006.03.10 |
申请人 |
AZ ELECTRONIC MATERIALS USA CORP. |
发明人 |
CHEN, CHUNWEI;LU, PING-HUNG;ZHUANG, HONG;NEISSER, MARK |
分类号 |
G03F7/004;G03F7/022;G03F7/039 |
主分类号 |
G03F7/004 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|