| 摘要 |
<p>A nitride-based light-emitting device capable of suppressing reduction of the light output characteristic as well as reduction of the manufacturing yield is provided. This nitride-based light-emitting device comprises a conductive substrate (1, 21, 31, 51, 71) at least containing a single type of metal and a single type of inorganic material having a lower linear expansion coefficient than the metal and a nitride-based semiconductor element layer (10, 30, 50, 70) bonded to the conductive substrate.
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