PHASE CHANGEABLE MATERIAL LAYER, METHOD OF FORMING PHASE CHANGEABLE MATERIAL LAYER AND METHODS OF MANUFACTURING A PHASE CHANGEABLE MEMORY DEVICE USING THE SAME

摘要

A phase changeable material layer, a method for forming the phase changeable material layer, and a method for manufacturing a phase changeable memory device are provided to improve a phase changing property of the phase changeable material layer by increasing a density of the phase changeable material layer. A plasma containing hydrogen plasma is formed in a reaction chamber where an object is loaded(S10). A first source gas containing a first material is supplied to the reaction chamber(S20), such that a first material film is formed on the object(S30). A second source gas containing a second material is supplied to the reaction chamber(S40), such that a first composite material film containing the first and second materials is formed on the object(S50). A third source gas containing a third material is supplied to the reaction chamber(S60), such that a third material film is formed on the first composite material film(S70). A fourth source gas containing a fourth material is supplied to the reaction chamber(S80), such that a second composite material film containing the third and fourth materials is formed on the object(S90).