| 摘要 |
An electrostatic breakdown protection device is provided to quickly protect an inner circuit from an electrostatic breakdown by bypassing a current by turning off a MOS transistor using a divided voltage. An electrostatic breakdown protection device is connected to a first line(3), which connects a terminal with an inner circuit. The electrostatic breakdown protection device includes a second line(4), first and second capacitors(6,7), and a MOS transistor(5). The second line supplies a first voltage. The first and second capacitors are connected between the first and second lines and divide the voltage applied on the first line through the terminal. A drain of the MOS transistor is connected to the first line. A source of the transistor is connected to the second line. The divided voltage is applied on the first and second capacitors.
|
