A method of forming dual work function gate electrodes using a doped polysilicon and a metal silicon germanium compound,申请号EP20030104320-传众专利搜索

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发明名称	A method of forming dual work function gate electrodes using a doped polysilicon and a metal silicon germanium compound
摘要
申请公布号	EP1422755(B1)	申请公布日期	2008.01.16
申请号	EP20030104320	申请日期	2003.11.21
申请人	TEXAS INSTRUMENTS INCORPORATED	发明人	ROTONDARO, ANTONIO L. P.;VISOKAY, MARK R.;COLOMBO, LUIGI
分类号	H01L27/092;H01L21/8238	主分类号	H01L27/092
代理机构		代理人
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