ORGANIC THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURIG THE SAME

摘要

An organic TFT substrate and a method for manufacturing the same are provided to form a gate insulation film with SiNx(Silicon Oxide) in order to intercept the flow of off current when TFT on voltage is supplied. An organic TFT substrate comprises a gate line, a data line(110), an organic TFT, a pixel electrode(118) and a gate insulation film(106). The gate line is formed on a lower substrate(102). The data line(110), crossed with the gate line, defines a sub pixel region. The organic TFT, crossed with the gate line and the data line(110), is connected with the gate line and the data line(110). The pixel electrode(118), formed at the sub pixel region, is connected with the organic TFT. The gate insulation film(106) is formed between the gate line and the data line(110). Also the gate insulation film(106), made of an inorganic insulation film, such as SiNx, is formed between the gate electrode(103) of the organic TFT and an organic semiconductor layer(114).