| 摘要 |
A method of direct bonding two substrates used in electronics, optics, or optoelectronics is provided to bond the substrates directly without an arbitrary intermediate layer. A method of direct bonding two substrates(1,2) used in electronics, optics, or optoelectronics includes the steps of: performing heat-treatment as preparation treatment prior to bonding on at least one of front faces(11,21) of two substrates for at least 30seconds at a temperature of 900°C ~ 1200°C, in a gaseous atmosphere including hydrogen and/or argon; and bonding directly together the respective front faces of the two substrates. One or both of the two substrates are made of semiconductor material. Further, the preparation treatment prior to bonding is performed at atmosphere containing Ar or H2 gas.
|
