发明名称 |
Wafer guide, MOCVD equipment, and nitride semiconductor growth method |
摘要 |
<p>Wafer guide for MOCVD equipment that reduces influence from III-nitride deposits. A wafer support (15) includes one or more first sections (15a), and a second section (15b) surrounding the first sections (15a). Each first section (15a) includes a surface for supporting wafers (19) on which nitride semiconductor is deposited. In MOCVD tools (11) and (13), a wafer guide (17) is provided on the wafer-support (15) second section (15b). The wafer guide (17) is furnished with a protector (17a) for covering the second section (15b), and one or more openings (17b) for receiving the wafers (19) on the first sections (15a). The protector (17a) has lateral surfaces (17c) defining the openings (17b) and guiding the wafers (19), and receives a wafer (19) in each opening (17b). A wafer (19) is loaded onto the support surface of each wafer-support (15) first section (15a) exposed in that opening (17b).
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申请公布号 |
EP1657744(A3) |
申请公布日期 |
2008.01.16 |
申请号 |
EP20050024015 |
申请日期 |
2005.11.03 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
UENO, MASAKI;YOSHIMOTO, SUSUMU;MATSUBA, SATOSHI |
分类号 |
H01L21/68;C23C16/30;C30B25/12;H01L21/00;H01L21/687 |
主分类号 |
H01L21/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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