发明名称 |
Method of simultaneously controlling ADI-AEI CD differences of openings having different sizes and etching process utilizing the same method |
摘要 |
A method of simultaneously controlling the ADI-AEI CD differences of openings having different sizes is disclosed. The openings are formed by: forming an ARC and a photoresist layer with a first and a second opening patterns of different sizes therein on a material layer, and etching the ARC and the material layer with the photoresist layer as a mask to form in the material layer a first/second opening corresponding to the first/second opening pattern, wherein the etching recipe makes the first/second opening smaller than the first/second opening pattern by a first/second size difference (DeltaS<SUB>1</SUB>/DeltaS<SUB>2</SUB>) and the difference between DeltaS<SUB>1 </SUB>and DeltaS<SUB>2 </SUB>is a relative size difference. The method is characterized by that an etching parameter affecting the relative size difference is set at a first value in etching the ARC and at a second value different from the first value in etching the material layer.
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申请公布号 |
US7319067(B2) |
申请公布日期 |
2008.01.15 |
申请号 |
US20050163981 |
申请日期 |
2005.11.07 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHOU PEI-YU;LIAO JIUNN-HSING |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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