发明名称 MULTIPLE INLET ATOMIC LAYER DEPOSITION REACTOR
摘要 A reactor of an atomic layer deposition device is provided to prevent pollutants from being generated by preventing reaction residues from reacting with one another or accumulating around a gas inlet hole. A reactor of an atomic layer deposition device includes a reaction space(251), plural gas inlet holes(210,212), a gate outlet hole(220), a gas flow adjusting unit(205), and a reaction chamber. The reaction chamber includes a substrate support mount, which mounts a substrate in the reaction space. The gas flow adjusting unit is arranged between the gas inlet hole and the reaction space and includes plural gas inlet channels. A size of the gas inlet channel gets wider from one of the gas inlet hole to a first portion around the reaction space.
申请公布号 KR20080005970(A) 申请公布日期 2008.01.15
申请号 KR20077027238 申请日期 2006.05.04
申请人 ASM GENITECH KOREA LTD. 发明人 KIM, DAE YOUN;LEE, JEONG HO;YOO, YONG MIN
分类号 H01L21/10 主分类号 H01L21/10
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