发明名称 |
VERFAHREN UND EINRICHTUNG ZUM LASERÄTZEN EINER STRUKTUR DURCH ZUNÄCHST BESTRAHLEN VON BEREICHEN DER STRUKTUR ZUR ÄNDERUNG DER KRISTALLINITÄT |
摘要 |
<p>An etching method includes applying a first electromagnetic radiation to an area of structure, thereby altering a characteristic of the structure in the area, and applying a second electromagnetic radiation to the structure, the second electromagnetic radiation configured to selectively ablate the structure based on the characteristic.</p> |
申请公布号 |
AT383221(T) |
申请公布日期 |
2008.01.15 |
申请号 |
AT20050736848T |
申请日期 |
2005.04.18 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
NELSON, CURT;LONG, GREG |
分类号 |
B23K26/40;B01J19/12;B23K26/06;B23K26/42;C23F4/00;H01L21/268 |
主分类号 |
B23K26/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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