| 摘要 |
A fuse of a semiconductor and its manufacturing method are provided to prevent cracks from being formed on a metal layer by forming the fuse in a single-layer structure. A fuse of a semiconductor includes an insulation layer(32), which is formed on a lower layer(31). A cell region and a fuse region are defined on the lower electrode. The insulation layer is selectively etched in the cell region. A lower electrode(33), a dielectric film, and an upper electrode(201) are sequentially laminated to form a capacitor. Titanium nitride film(35A) and a polysilicon layer(37A) are laminated to form the upper electrode in the cell region on the same plane. A single-layer polysilicon(37B) is used to form the fuse in the fuse region. During a high temperature/high humidity reliability test, the fuse in the fuse region is prevented from being oxidized or expanded.
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