| 摘要 |
<p>A phase-change random access memory and a manufacturing method thereof are provided to suppress an electron migration by adjusting a relation between a thickness of a phase change film and an exposure amount of an electrode film. A phase-change random access memory includes an interlayer dielectric(9), a plug(13), a phase change film(15), and an electrode film(16). The interlayer dielectric and the plug are formed on one surface of a semiconductor substrate. The phase change film is formed on the interlayer dielectric and the plug and has different resistivities according to a phase change. A third line Q3, which is formed by connecting a first point P1 on a closed curve Q1 with a center of a second closed curve Q2, intersects the second closed curve at a second point P2. The first closed curve is formed by projecting an interface between the phase change film and the electrode film on a surface of the interlayer dielectric. The second curve is formed on the plug. A relation, 0.3<= L/T<= 1, is satisfied, where L is a length of a longest line between P1 and P2, and T is a thickness of the phase change film.</p> |
