| 摘要 |
<p>A low power phase change memory cell is provided to decrease power consumption of the memory cell by forming a stack of a phase change material between counter electrodes, which define a narrow active region. A low power phase change memory cell includes plural memory cells. The memory cell includes first and second electrodes(120,122) and a memory stack(124). The first and second electrodes are arranged to face each other. The memory stack includes first and second layers and a phase change material. The first layer is contacted with the first electrode and made of a first thermal isolation material. The second layer is contacted with the second electrode and made of a second thermal isolation material. The phase change material is arranged between the first and second layers. The phase change material defines an active region, which is narrower than the first and second layers.</p> |
