METHOD OF FORMING METAL OXIDE AND APPARATUS FOR PERFORMING THE SAME

摘要

A method for forming metal oxide, and a device thereof are provided to produce the metal oxide with improved electric performance. In a method for forming metal oxide, metal precursor gas is flowed and supplied along a surface of a substrate(10) to form a metal precursor layer on the substrate. Oxide gas which includes ozone is flowed and supplied along the surface of the metal precursor layer to oxidize the metal precursor layer. RF power is given to the oxide gas which is flowed along the surface of the metal precursor layer to promote reaction between the metal precursor layer and the oxide gas. A device(100) thereof includes a substrate stage(200), a chamber(300), and an RF power source(900). The substrate stage includes a supporting zone(210) supporting the substrate, and a circumferential zone(220) covering the supporting zone. The chamber is positioned on the circumferential zone of the substrate stage to limit a space which the substrate is positioned. The chamber supplies metal precursor gas along the surface of the substrate to form the metal precursor layer on the substrate. The chamber has a gas induction port to supply the oxide gas with the ozone along the surface of the metal precursor layer to oxidize the metal precursor layer. The RF power source is connected with the chamber to give the RF power to the oxide gas which flows along the surface of the metal precursor layer to promote the reaction between the metal precursor layer and the oxide gas.