发明名称 SUBSTRATE TREATMENT APPARATUS AND METHOD
摘要 A substrate treatment apparatus and a method for rinsing the substrate treatment apparatus are provided to improve a rinsing efficiency by rinsing a reaction chamber at a high temperature. A stage heater(170) is arranged in a reaction chamber(110) and includes a first electrode for generating plasma. The stage heater heats up a substrate, which is mounted on the first electrode. A shower head(130) is arranged in the reaction chamber and includes a second electrode for forming the plasma. The shower head supplies first and second reaction gases into the reaction chamber. A remote plasma generator(140) is arranged outside the reaction chamber to activate a rinsing gas, and supplies the rinsing gas. A gas transfer unit(150) is arranged between the reaction chamber and the remote plasma generator, and includes first to third lines. The first and second reaction gases are introduced to the first line. The rinsing gas is supplied through the second line. The first and second reaction gases are separately supplied to the shower head from one another.
申请公布号 KR100794661(B1) 申请公布日期 2008.01.14
申请号 KR20060078371 申请日期 2006.08.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HONG, HYUNG SIK;KIM, KI SUN;HUH, NO HYUN;LEE, JONG MYEONG
分类号 H01L21/304;H01L21/3065 主分类号 H01L21/304
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