Methods Of Forming Barrier Metal Layer Of Semiconductor Device,申请号KR20060058960-传众专利搜索

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发明名称	Methods Of Forming Barrier Metal Layer Of Semiconductor Device
摘要
申请公布号	KR100794657(B1)	申请公布日期	2008.01.14
申请号	KR20060058960	申请日期	2006.06.28
申请人		发明人
分类号	H01L27/115;H01L21/3205;H01L21/8247	主分类号	H01L27/115
代理机构		代理人
主权项
地址

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