| 摘要 |
A flash memory device and a refresh method thereof are provided to detect a memory cell where charge loss occurred by using a single latch and then to perform refresh operation for the detected memory cell. A memory cell array includes memory cells arranged in rows and columns. A page buffer circuit(PB) has a single latch structure, and reads data from selected memory cells of the memory cell array. A controller controls the page buffer circuit to detect memory cells where charge loss occurred among the memory cells of the selected row.
|
