| 摘要 |
A technology for realizing a high-precision surface planarization in the use of copper as a wiring metal. Use is made of a polishing composition comprising water; a peroxide oxidizer; a surface protective agent for copper; at least one first chelating agent selected from the group consisting of tartaric acid, malonic acid, malic acid, citric acid, maleic acid, oxalic acid and fumaric acid; and at least one second chelating agent selected from the group consisting of triethylenetetramine, ethylenediaminediacetic acid, ethylenediaminetetraacetic acid, tetraethylenepentamine, glycol-ether-diaminetetraacetic acid, trasn-1,2-cyclohexanediaminetetraacetic acid, o-phenanthroline and derivatives thereof.
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