| 摘要 |
An image sensor and a manufacturing method thereof are provided to minimize a light loss by decreasing a variation in focal lengths of red, blue, and green beams. An image sensor includes photo-electric conversion regions(52), gates(54), a color filter(58), a line layer(56), and a microlens(60). The photo-electric conversion regions and the gates are formed on a semiconductor substrate and constitute pixel regions. The color filter is formed on the photo-electric conversion region. The line layer is formed to be apart from the gates. The line layer opens restrictively the pixel regions. The microlens is formed using an apochromatic material on the color filter corresponding to the respective photo-electric conversion regions. The microlens has a crystal structure of fluorite.
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