| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, by which a chamber is dry-cleaned without using a dummy wafer and without damaging a lower electrode in the chamber when patterning a silicon film of a polymetal gate wire. SOLUTION: The method includes steps of: carrying a wafer having a silicon nitride film on a surface of a polysilicon film into the chamber (step S1); mounting it on the lower electrode, then dry-cleaning the chamber in the first place (step S2); and removing a silicon-based reaction product attaching to an inner wall of the chamber. The method further includes steps of: dry-etching the wafer, patterning the silicon nitride film and the polysilicon film (step S3); taking out the wafer from the lower electrode after patterning, and carrying it out of the chamber (step S4). The processing is repeated for each wafer. COPYRIGHT: (C)2008,JPO&INPIT |
