| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to obtain a highly integrated, high-performance nonvolatile semiconductor storage element that aims to combine the storing of over one-bit information and low power supply voltage, which is provided with the simplest possible wiring. SOLUTION: The nonvolatile semiconductor storage element has secondary conductive source/drain regions 4 formed so as to face each other on a primary conductive semiconductor region 3 formed on a semiconductor substrate 1; at least bilaminar ferroelectric insulating films 5, 7, and 9 formed between the source/drain regions above the semiconductor region and laminated with floating gate electrodes 6 and 8 in-between; a primary insulating film 10 prepared on a side surface of a multilayer film of the floating gate electrode and ferroelectric insulting films, in a direction perpendicular to a direction linking the source/drain regions; and a control gate electrode 11 formed on the side surface of the multilayer film of the floating gate electrode and ferroelectric insulating film, where the primary insulating film is prepared, such that it sandwiches the primary insulating film, and formed on the top surface of the multilayer film of the floating gate electrode and ferroelectric insulating films. COPYRIGHT: (C)2008,JPO&INPIT
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