| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a crystallized semiconductor thin film using recessions having an aspect ratio smaller than a usual aspect ratio. SOLUTION: (a) A plurality of recessions are formed on a surface of a substrate. (b) An amorphous or polycrystalline silicon film is formed on the substrate so as to fill the recessions with the silicon film. (c) A first laser pulse is emitted to be incident on a part of the silicon film to heat the silicon film, and, while a heat effect by the first laser pulse still remains, a second laser pulse is emitted to be incident on the same incident position to temporarily melt the silicon film at the incident position to crystallize the silicon film. COPYRIGHT: (C)2008,JPO&INPIT
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