High frequency diode and method for producing same

摘要

A high frequency diode comprising: a P type region, a N type region, and an I layer as a high resistivity layer interposed between the P type region and the N type region, wherein the I layer is made of a silicon wafer that has a carbon concentration of 5x10¹⁵ to 5x10¹⁷ atoms/cm³, interstitial oxygen concentration of 6.5x10¹⁷ to 13.5x10¹⁷ atoms/cm³, and a resistivity of 100 Omegacm or more.