发明名称 Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
摘要 With non-contact and contact IC chips becoming common, it is necessary to mass-produce enormous amount of IC chips, which are utilizable for human beings, animals and plants, commercial products, banknotes, and the like, at low cost. For example, it is necessary to manufacture IC chips to be applied to commercial products, banknotes, and the like at a cost of 1 to several yen per IC chip, preferably, at a cost less than 1 yen, and it is desired to realize a structure of an IC chip that can be mass-produced at low cost and a manufacturing process of the IC chip. A method of manufacturing a thin film integrated circuit device according to the present invention includes steps of forming a peel-off layer over a thermally oxidized silicon substrate, forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween, forming a groove between the plurality of thin film integrated circuit devices, and separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to remove the peel-off layer.
申请公布号 US2008009125(A1) 申请公布日期 2008.01.10
申请号 US20070896509 申请日期 2007.09.04
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;TAKAYAMA TORU;KANNO YOHEI
分类号 H01L21/30;G06K19/07;G06K19/077;H01L21/00;H01L21/68;H01L21/82;H01L21/84;H01L23/02;H01L23/498;H01L27/00 主分类号 H01L21/30
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