COMPRESSIVE NITRIDE FILM AND METHOD OF MANUFACTURING THEREOF
摘要
Embodiments of the invention provide a method of forming a compressive stress nitride film overlying a plurality of p-type field effect transistor gate structures produced on a substrate through a high-density plasma deposition process. Embodiments include generating an environment filled with high-density plasma using source gases of at least silane, argon and nitrogen; biasing the substrate to a high frequency power of varying density, in a range between 0.8W/cm<SUP>2</SUP> and 5.0W/cm<SUP>2</SUP>; and depositing the high-density plasma to the plurality of gate structures to form the compressive stress nitride film.
申请公布号
WO2007136907(A3)
申请公布日期
2008.01.10
申请号
WO2007US63377
申请日期
2007.03.06
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION;YANG, DAEWON;LEE, WOO-HYEONG;SU, TAI-CHI;WANG, YUN-YU