发明名称 |
SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD OF EVALUATING MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE |
摘要 |
A p impurity region ( 3 ) defines a RESURF isolation region in an n<SUP>- </SUP>semiconductor layer ( 2 ). A trench isolation structure ( 8 a) and the p impurity region ( 3 ) together define a trench isolation region in the n<SUP>- </SUP>semiconductor layer ( 2 ) in the RESURF isolation region. An nMOS transistor ( 103 ) is provided in the trench isolation region. A control circuit is provided in the RESURF isolation region excluding the trench isolation region. An n<SUP>+ </SUP>buried impurity region ( 4 ) is provided at the interface between the n<SUP>- </SUP>semiconductor layer ( 2 ) and a p<SUP>- </SUP>semiconductor substrate ( 1 ), and under an n<SUP>+ </SUP>impurity region 7 connected to a drain electrode ( 14 ) of the nMOS transistor ( 103 ).
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申请公布号 |
US2008009113(A1) |
申请公布日期 |
2008.01.10 |
申请号 |
US20070850780 |
申请日期 |
2007.09.06 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
SHIMIZU KAZUHIRO |
分类号 |
H01L21/66;H01L29/08;H01L21/76;H01L21/763;H01L21/8234;H01L27/08;H01L27/088;H01L29/06;H01L29/78 |
主分类号 |
H01L21/66 |
代理机构 |
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主权项 |
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地址 |
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