发明名称 POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a positive resist composition capable of reducing linewise roughness and excellent in suppressive effect of footing liable to occur in the case of using a substrate on which an inorganic antireflection film has been formed, and a resist pattern forming method. <P>SOLUTION: The positive resist composition comprises a resin component (A) and an acid generator component (B), wherein the component (A) has a constitutional unit (a1) derived from an acrylic ester containing a tertiary alkyl ester type acid-dissociable dissolution inhibiting group containing an aliphatic monocyclic group and/or an aliphatic branched chain tertiary alkyl ester type acid-dissociable dissolution inhibiting group, and the component (b) comprises an acid generator (B1) having a cationic moiety represented by formula (b'-1), wherein R<SP>1</SP>and R<SP>2</SP>each independently represent a naphthyl group which may have a substituent, and R<SP>3</SP>represents an alkyl group or an aryl group other than a naphthyl group. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008003381(A) 申请公布日期 2008.01.10
申请号 JP20060173919 申请日期 2006.06.23
申请人 TOKYO OHKA KOGYO CO LTD 发明人 TAKESHITA MASARU
分类号 G03F7/039;G03F7/004;H01L21/027 主分类号 G03F7/039
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