| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize a hetero-structure field effect transistor which is capable of producing a practical operating current using an enhancement-type nitride semiconductor. <P>SOLUTION: A level difference is provided to the (c) plane of a channel layer semiconductor 1 of a nitride semiconductor of hexagonal structure. The (c) plane of the channel layer semiconductor 1 is divided into two planes, an (a) plane or an (m) plane is formed as the side plane of the level difference, a barrier layer semiconductor/channel layer semiconductor hetero-structure as a junction structure of a barrier semiconductor layer 2 and a channel layer structure 1 is formed on the two (c) planes and the (a) plane or the (m) plane, a source electrode 3 is formed on one of the barrier layer semiconductor/channel layer semiconductor hetero-structures formed on the two (c) planes, a drain electrode 5 is formed on the other, and the barrier layer semiconductor/channel layer semiconductor hetero-structure formed on the side plane of the level difference is covered with a gate electrode 4 so that the hetero-structure field effect transistor can be formed using a nitride semiconductor. <P>COPYRIGHT: (C)2008,JPO&INPIT |
