| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a nitride semiconductor crystal separated from a different kind substrate by cutting a nitride semiconductor wafer where the nitride semiconductor crystal is epitaxially grown on the different kind substrate into two portions and in the method, an area including faults caused by lattice unconformity in high density is not included in a nitride semiconductor crystal layer separated from the different kind substrate. <P>SOLUTION: 1 is the different kind substrate, 2 is a buffer layer grown on the different kind substrate 1 and 3 is the nitride semiconductor crystal layer grown on the buffer layer 2. The nitride semiconductor crystal layer 3 is constituted of a lower crystal layer 31 and an upper crystal layer 32 where the absorptivity of the light of the wavelength of λ is different. One layer absorbing the light is decomposed by being irradiated with the light of the wavelength of λ either absorbed by the lower crystal layer 31 or the upper crystal layer 32 and then the wafer is cut into two portions at the neighbouhood of the boundary surfaces of both layers. Only the upper crystal layer 32 with low fault density can be separated from the different kind substrate 1. <P>COPYRIGHT: (C)2008,JPO&INPIT |
