摘要 |
PROBLEM TO BE SOLVED: To prevent the diffusion of fluorine and copper between a dielectric film and metal wiring when forming the metal wiring containing copper in the dielectric film using a fluorine-added carbon film as a dielectric film, e.g. interlayer dielectric film. SOLUTION: A titanium film as a first film for preventing the diffusion of fluorine is formed between the dielectric film composed of the fluorine-added carbon film and the copper wiring formed in the dielectric film, and a tantalum film as a second film for preventing the diffusion of copper is formed between the first film and the copper wiring. COPYRIGHT: (C)2008,JPO&INPIT |