发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To prevent the diffusion of fluorine and copper between a dielectric film and metal wiring when forming the metal wiring containing copper in the dielectric film using a fluorine-added carbon film as a dielectric film, e.g. interlayer dielectric film. SOLUTION: A titanium film as a first film for preventing the diffusion of fluorine is formed between the dielectric film composed of the fluorine-added carbon film and the copper wiring formed in the dielectric film, and a tantalum film as a second film for preventing the diffusion of copper is formed between the first film and the copper wiring. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008004841(A) 申请公布日期 2008.01.10
申请号 JP20060174429 申请日期 2006.06.23
申请人 TOKYO ELECTRON LTD 发明人 HORIGOME MASAHIRO
分类号 H01L21/3205;H01L21/768;H01L23/52;H01L23/522 主分类号 H01L21/3205
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