| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide semiconductor epitaxial substrate with less dislocation failure in a basal surface. SOLUTION: This method for manufacturing the silicon carbide semiconductor epitaxial substrate includes a process for preparing a silicon carbide single crystal substrate 10 having a surface 10a whose offset angle is 2-10°and root mean square roughness is 0.1 nm or less, and a process for growing an epitaxial layer 11 comprising silicon carbide on the silicon carbide single crystal substrate in a chemical vapor deposition method. A growth condition for the epitaxial layer is set so that the root mean square roughness Rq (nm) of the surface of the grown epitaxial layer satisfies a relation of Rq (nm)<0.007×V (μm/h)+0.074, wherein growth rate of the epitaxial layer 11 is V (μm/h). COPYRIGHT: (C)2008,JPO&INPIT
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