| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetoresistance element manufacturing method that enables to efficiently form a nano-contact part in a size of about 1-50 nm in width. SOLUTION: A first resist layer is formed on a ferromagnetic layer 16. The first resist layer is developed after being exposed with a first exposure pattern in which at least a part of a boundary has a V-shape between an exposure part and a non-exposure part. The ferromagnetic layer 16 is etched so as to form a V-shaped notch 20, equivalent to the V-shape, on the ferromagnetic layer 16. A second resist layer 34 is formed on the ferromagnetic layer 16. The second resist layer 34 is developed after being exposed with a second exposure pattern in which at least a part in a boundary 36 has a linear shape between exposure and non-exposure parts and is arranged so as to face the vertex of the V-shaped notch 20. The ferromagnetic layer 16 is etched so as to form a linear part equivalent to the linear shape, on the ferromagnetic layer 16. COPYRIGHT: (C)2008,JPO&INPIT
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