| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of extracting potential defectives in advance for improved reliability of products. SOLUTION: The manufacturing method of a semiconductor device includes a pre-process (step S11) in which a multilayer film is formed on a wafer to form a circuit pattern, and a post process (step S19) in which a wafer that has been treated in the pre-process is diced to be divided in semiconductor chips, which are mounted on a lead frame and then wire-bonded before resin-sealed. It includes, during the pre-process or after the post process, a stress application process (step S13) in which a wafer or semiconductor device is applied with a specified thermal and mechanical stress, and an electric test process (step S15) to perform electric test with the wafer or semiconductor device after the stress application process. COPYRIGHT: (C)2008,JPO&INPIT
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