摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which is superior in short channel characteristic, writing characteristic and retention, and to provide its manufacturing method. SOLUTION: The nonvolatile semiconductor storage device is provided with a semiconductor area 10, element isolation areas 13 which are arranged in the semiconductor area 10 and is extended in the direction of column, a selective epitaxial growth layer 12 which is arranged on the semiconductor area 10 pinched by the element isolation areas 13 and of which section along the direction of row is like a projected shape, a source/drain area arranged on the selective epitaxial growth layer 12, a gate insulation film 14 which is pinched by the element isolation areas 13 and is arranged on the selective epitaxial growth layer 12 between the source/drain area, a floating gate electrode layer 15 which is pinched by the element isolation areas 13 and is arranged on the gate insulation film 14, a gate-to-gate insulation film 16 which is arranged in the floating gate electrode layer 15 and the upper surface of the element isolation areas 13, and a control gate electrode layer 17 which is arranged on the gate-to-gate insulation film 16 and is extended in the direction of row. COPYRIGHT: (C)2008,JPO&INPIT
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