发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE, AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which is superior in short channel characteristic, writing characteristic and retention, and to provide its manufacturing method. SOLUTION: The nonvolatile semiconductor storage device is provided with a semiconductor area 10, element isolation areas 13 which are arranged in the semiconductor area 10 and is extended in the direction of column, a selective epitaxial growth layer 12 which is arranged on the semiconductor area 10 pinched by the element isolation areas 13 and of which section along the direction of row is like a projected shape, a source/drain area arranged on the selective epitaxial growth layer 12, a gate insulation film 14 which is pinched by the element isolation areas 13 and is arranged on the selective epitaxial growth layer 12 between the source/drain area, a floating gate electrode layer 15 which is pinched by the element isolation areas 13 and is arranged on the gate insulation film 14, a gate-to-gate insulation film 16 which is arranged in the floating gate electrode layer 15 and the upper surface of the element isolation areas 13, and a control gate electrode layer 17 which is arranged on the gate-to-gate insulation film 16 and is extended in the direction of row. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008004614(A) 申请公布日期 2008.01.10
申请号 JP20060170121 申请日期 2006.06.20
申请人 TOSHIBA CORP 发明人 KITO TAKASHI;AOKI NOBUTOSHI;KITO MASARU;KATSUMATA RYUTA;KONDO MASAKI;KUSUNOKI NAOKI;TODA TOSHIYUKI;ITO SANAE;TANIMOTO KOKICHI;AOCHI HIDEAKI;NITAYAMA AKIHIRO;SHIRATA RIICHIRO
分类号 H01L21/8247;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
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