发明名称 FILM DEPOSITION APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of implanting an alloy in an object for film deposition. SOLUTION: The film deposition apparatus has first and second coaxial vapor deposition sources 3a, 3b. The positively charged microparticles are emitted from first and second apertures 39a, 39b of the first and second vapor deposition sources 3a, 3b, and the charged microparticles are deflected in its flight direction by the coulomb force and reach a surface of an object 68 for film deposition. When the negative voltage is applied to the surface of the object 68, the flying speed of the charged microparticles is accelerated, and the charged microparticles are implanted in the surface of the object 68. An alloy can be implanted in the surface of the object 68 if using different metallic materials for vapor deposition materials of the first and second coaxial vapor deposition sources 3a, 3b. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008001925(A) 申请公布日期 2008.01.10
申请号 JP20060170676 申请日期 2006.06.20
申请人 ULVAC JAPAN LTD 发明人 AGAWA YOSHIAKI;HARA YASUHIRO;MATSUURA MASAMICHI;SAITO ATSUSHI
分类号 C23C14/32 主分类号 C23C14/32
代理机构 代理人
主权项
地址