| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent short circuit between silicon epitaxial layers adjacent to each other. <P>SOLUTION: An exposed surface of an active region 13 is deepened by dry etching or wet etching, thereby forming a recess portion 13a on the exposed surface of the active region 13. In this way, a side surface portion 12a of a field oxide film 12 constituting an element isolation region 12 is exposed and the recess portion 13a gets surrounded by the side surface portion 12a of the field oxide film. After that, silicon epitaxial layers 19 are formed on the exposed surface of the active region 13 having the recess portion 13a formed thereon. In this case, since the exposed surface of the active region is deepened and both ends of a width direction of the active region 13 are surrounded by walls made of the field oxide film, the growth of the silicon epitaxial layers 19 in a lateral direction can be suppressed, and the short circuit between the silicon epitaxial layers 19, 19 adjacent to each other can be prevented. <P>COPYRIGHT: (C)2008,JPO&INPIT |
