NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device that is excellent in write and read characteristics and is easy to manufacture; and to provide a method of manufacturing the same.

SOLUTION: The nonvolatile semiconductor memory device has: a plurality of source/drain regions 11 formed approximately in parallel; a semiconductor substrate 1 having a depression 12 formed between the plurality of source/drain regions 11; an electric charge accumulation gate 3 formed in the depression 12 of the semiconductor substrate 1; and a plurality of conductive gates 6 that intersects the plurality of source/drain regions 11 and is arranged on the accumulation gate 3 with an insulating layer in between.

COPYRIGHT: (C)2008,JPO&INPIT