| 摘要 |
A system for examining a patterned structure formed on a semiconductor wafer using an optical metrology model includes a first fabrication cluster, a metrology cluster, an optical metrology model optimizer, and a real time profile estimator. The first fabrication cluster configured to process a wafer, the wafer having a first patterned and a first unpatterned structure. The first patterned structure has underlying film thicknesses, critical dimension, and profile. The metrology cluster including one or more optical metrology devices coupled to the first fabrication cluster. The metrology cluster is configured to measure diffraction signals off the first patterned and the first unpatterned structure. The metrology model optimizer is configured to optimize an optical metrology model of the first patterned structure using one or more measured diffraction signals off the first patterned structure and with floating profile parameters, material refraction parameters, and metrology device parameters. The real time profile estimator is configured to use the optimized optical metrology model from the optical metrology model optimizer, the measured diffraction signals off the first patterned structure, and a fixed value within the range of values for at least one parameter from amongst the material refraction parameters and the metrology device parameters. The real time profile estimator is configured to create an output comprising underlying film thickness, critical dimension, and profile of the first patterned structure.
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