A MOSFET FUSE PROGRAMMED BY ELECTROMIGRATION

摘要

A one-time programmable field effect transistor (FET) e-fuse has a silicided gate connected to the drain while the source is grounded. A voltage stimulus applied to the drain forces current to flow through the channel coupling the drain to the source. The magnitude of the current exceeding the threshold current density initiates electromigration of the source/drain silicide into the channel region, such that the source/drain of the FET is shorted to the substrate after programming. Under these constraints, the fuse device conducts current even when the transistor is in the off-state. The MOSFET e-fuse preferably uses a minimum channel length NFET/PFET and scales down its dimensions to conform to those allowed by the technology.