发明名称 |
Non-volatile memory device including variable resistance material and method of fabricating the same |
摘要 |
Provided is a non-volatile memory device including a variable resistance material and method of fabricating the same. The non-volatile memory device may include a lower electrode, an intermediate layer on the lower electrode including one material selected from the group consisting of HfO, ZnO, InZnO, and ITO, a variable resistance material layer on the intermediate layer, and an upper electrode on the variable resistance material layer. A memory device having multi-level bipolar switching characteristics based upon the size of the device may be provided.
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申请公布号 |
US2008007988(A1) |
申请公布日期 |
2008.01.10 |
申请号 |
US20070802661 |
申请日期 |
2007.05.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
AHN SEUNG-EON;LEE MYOUNG-JAE;KIM DONG-CHUL |
分类号 |
G11C11/24;H01L21/00;H01L21/20 |
主分类号 |
G11C11/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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