| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide CMP slurry capable of polishing a Cu film at a practical speed while inhibiting dishing or corrosion without leaving Cu residuals. <P>SOLUTION: The CMP slurry contains water, persulfuric acid or its salt, basic amino acid blended by ≥0.05 wt.% and ≤0.5 wt.%, a water insoluble complex formation agent for forming a water insoluble complex of metal, a surfactant, and colloidal silica with a primary particle diameter of ≥5 nm and ≤50 nm. <P>COPYRIGHT: (C)2008,JPO&INPIT |
