发明名称 SPUTTER DEPOSITION APPARATUS AND METHOD
摘要 PROBLEM TO BE SOLVED: To provide a sputter deposition apparatus and a method therefor capable of homogeneously depositing a sputtered material since a light component in the sputtered material is likely deposited in higher concentration than that of a heavy component in the sputtered material. SOLUTION: A sputter deposition apparatus is provided, including at least one sputter target 2, a first plasma 3, a substrate holder 4, and a further plasma 5. The further plasma 5 is preferably an ECWR plasma. According to an additional embodiment of the invention, an anode 6 is provided between the further plasma 5, and the substrate holder 4. According to a further embodiment, the substrate holder 4 includes a dielectric layer with varying thickness. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008001989(A) 申请公布日期 2008.01.10
申请号 JP20070165010 申请日期 2007.06.22
申请人 QIMONDA AG 发明人 UFERT KLAUS DIETER
分类号 C23C14/35;H01L21/363 主分类号 C23C14/35
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