| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal from which a silicon carbide single crystal substrate having excellent uniformity and low resistivity can be taken out; and to provide a silicon carbide single crystal ingot. SOLUTION: The method for producing the silicon carbide single crystal comprises growing a bulk silicon carbide single crystal on a seed crystal, wherein a silicon carbide single crystal having an average volume resistivity of≥0.0005 to≤0.050Ω×cm is grown on a seed crystal in which the offset angle from ä0001} plane of the crystal growth surface is≥2 to≤15°. The silicon carbide single crystal ingot is produced by the method. COPYRIGHT: (C)2008,JPO&INPIT
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